AP15P10GJ |
Part Number | AP15P10GJ |
Manufacturer | Advanced Power Electronics |
Description | The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as high efficiency switching DC/DC converters and DC mo... |
Features |
on Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.3 110 Units ℃/W ℃/W
Data and specifications subject to change without notice
200810051-1/4
AP15P10GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=-1mA
2
Min. -100 -1 -
Typ. -0.1 8 37 5 15 11 25 56 36 250 75 3.6
Max. Units 210 -3 -25 -100 ±100 60 5 V V/℃ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
Breakdown Voltage Temper... |
Document |
AP15P10GJ Data Sheet
PDF 71.32KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AP15P10GH |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | AP15P10GH-HF |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | AP15P10GJ-HF |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | AP15P10GP |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | AP15P10GP-HF |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |