AP15P10GH - Advanced Power Electronics

AP15P10GH P-CHANNEL ENHANCEMENT MODE POWER MOSFET

The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as high efficiency switching DC/DC converters and DC motor control. The through-hole version (AP15P10GJ) is available for low-profile applications. G G D S TO-252(H) D S TO-251(J) Absolute Maximum Ratings Symbo.

Features

on Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.3 110 Units ℃/W ℃/W Data and specifications subject to change without notice 200810051-1/4 AP15P10GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-1mA 2 Min. -100 -1 - Typ. -0.1 8 37 5 15 11 25 56 36 250 75 3.6 Max. Units 210 -3 -25 -100 ±100 60 5 V V/℃ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temper.