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TK35E08N1 |
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| Part Number | TK35E08N1 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TK35E08N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK35E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 10.0 mΩ (typ.) (VGS = 10... |
| Features |
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 10.0 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA)
3. Packaging and Internal Circuit
1: Gate 2: Drain (heatsink) 3: Source
TO-220
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (t = 1 ms) (Tc = 25) ... |
| Document |
 TK35E08N1 Data Sheet
PDF 244.79KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TK35E08N1 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | TK35A08N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 3 | TK35A08N1 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | TK35A65W |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | TK35A65W5 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|