TK80S04K3L |
Part Number | TK80S04K3L |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | MOSFETs Silicon N-channel MOS (U-MOS) TK80S04K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source... |
Features |
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.4 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK80S04K3L
DPAK+
1: Gate 2: Drain (heatsink) 3: Source
Start of commercial production
2011-04
1
2014-08-04
Rev.4.0
TK80S04K3L
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
40
V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
... |
Document |
TK80S04K3L Data Sheet
PDF 305.18KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TK80S06K3L |
Toshiba |
Silicon N-Channel MOSFET | |
2 | TK8011 |
Tenx |
1 key touch detector | |
3 | TK8012 |
Tenx |
2 key touch detector | |
4 | TK8021 |
Tenx |
1 key touch detector | |
5 | TK8022 |
Tenx |
2 key touch detector |