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GT45F123 |
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| Part Number | GT45F123 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | GT45F123 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT45F123 For PDP-TV Applications • • • • • 5th generation (trench gate structure) IGBT Enhancement-mode Low input capacitance... |
| Features |
thin the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance , junction to case Symbol Rth (j-c) Rating 4.8 Unit °C/W
(Tc = 25°C)
Thermal resistance , junction to ambient
(Ta = 25°C)
Rth (j-a)
62.5
°C/W
Marking
45F123
Part No. (or abbreviation code) Lot code
Note 1: ICP maximum rating(200A) is limite... |
| Document |
 GT45F123 Data Sheet
PDF 241.66KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GT40G121 |
Toshiba Semiconductor |
Silicon N-Channel IGBT |
|
| 2 | GT40J121 |
Toshiba |
Silicon N-Channel IGBT |
|
| 3 | GT40J321 |
Toshiba Semiconductor |
Silicon N-Channel IGBT |
|
| 4 | GT40J322 |
Toshiba Semiconductor |
Silicon N-Channel IGBT |
|
| 5 | GT40M101 |
Toshiba Semiconductor |
SILICON N-CHANNEL IGBT |
|