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ME20N03 |
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| Part Number | ME20N03 |
| Manufacturer | Matsuki |
| Description | The ME20N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to min... |
| Features |
● RDS(ON) ≦15mΩ@VGS=10V ● RDS(ON) ≦20mΩ @VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Desktop Computer ● Video Graphic Accelerate Card ● Battery Powered System ● DC/DC Converter PIN CONFIGURATION (TO-252) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Thermal Resistance-Junction to Ambient(Note 2) Ther... |
| Document |
 ME20N03 Data Sheet
PDF 729.32KB |
| Distributor | Stock | Price | Buy |
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