BUK9535-55A |
Part Number | BUK9535-55A |
Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
Description | Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for u... |
Features |
Low conduction losses due to low on-state resistance
1.3 Applications
Automotive and general purpose power switching
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C ID = 14 A; Vsup ≤ 25 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C Min Typ 24 26 Max Unit 55 34 85 32 35 49 V A W mΩ mΩ mJ
Static characteristics
Avalanche ruggedness EDS(... |
Document |
BUK9535-55A Data Sheet
PDF 223.34KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BUK9535-55 |
NXP |
TrenchMOS transistor Logic level FET | |
2 | BUK9535-100A |
NXP Semiconductors |
N-channel TrenchMOS logic level FET | |
3 | BUK953R2-40B |
NXP Semiconductors |
N-channel TrenchMOS logic level FET | |
4 | BUK953R2-40E |
NXP Semiconductors |
N-channel TrenchMOS logic level FET | |
5 | BUK953R5-60E |
NXP Semiconductors |
N-Channel MOSFET |