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PMZB290UNE |
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| Part Number | PMZB290UNE |
| Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
| Description | N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. SO T8 1.2 Featur... |
| Features |
Very fast switching Low threshold voltage Trench MOSFET technology ESD protection up to 2 kV Ultra thin package profile of 0.37mm 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 500 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ 290 Max 20 8 1 380 Unit V V A mΩ Static characteristics [1] Device moun... |
| Document |
 PMZB290UNE Data Sheet
PDF 339.63KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PMZB290UN |
NXP Semiconductors |
single N-channel Trench MOSFET |
|
| 2 | PMZB290UNE2 |
NXP |
N-channel Trench MOSFET |
|
| 3 | PMZB290UNE2 |
nexperia |
N-channel MOSFET |
|
| 4 | PMZB200UNE |
NXP |
N-channel Trench MOSFET |
|
| 5 | PMZB200UNE |
nexperia |
N-channel MOSFET |
|