Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
PMZ600UNE |
Click to view a larger image
| Part Number | PMZ600UNE |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and bene... |
| Features |
• • • • Trench MOSFET technology Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 470 mΩ 3. Applications • • • • Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 0.6 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ - Max 20 8 0.6 Unit V V A Static characteristics drai... |
| Document |
 PMZ600UNE Data Sheet
PDF 231.31KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PMZ600UNE |
nexperia |
N-channel MOSFET |
|
| 2 | PMZ600UNEL |
nexperia |
N-channel MOSFET |
|
| 3 | PMZ1000UN |
NXP Semiconductors |
N-channel TrenchMOS standard level FET |
|
| 4 | PMZ1200UPE |
NXP |
P-channel Trench MOSFET |
|
| 5 | PMZ1200UPE |
nexperia |
P-channel MOSFET |
|