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SSI2154 |
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| Part Number | SSI2154 |
| Manufacturer | SeCoS Halbleitertechnologie |
| Description | The SSI2154 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-D... |
| Features |
bol
VDS VGS TA= 25° C TA= 70° C TA= 25° C TA= 70° C TA= 25° C TA= 70° C TA= 25° C TA= 70° C ID PD ID PD IDM RθJL TJ, TSTG
Rating
10S 20 ±6 0.88 0.71 0.37 0.23 0.76 0.6 0.27 0.17 1.4 260 -55~150 0.8 0.64 0.3 0.19 0.69 0.55 0.22 0.14 Steady State
Unit
V V A W A W A ° C/W ° C
Continuous Drain Current Power Dissipation
2
2
Pulsed Drain Current
3
Maximum Junction-to-Lead Operating Junction & Storage Temperature Range
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
18-Oct-2012 Rev. A
Page 1 of 4
SSI2154
Elektronische Bauelemente 800mA, 20V Dual N... |
| Document |
 SSI2154 Data Sheet
PDF 562.11KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
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