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SSE4N60 |
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| Part Number | SSE4N60 |
| Manufacturer | SeCoS Halbleitertechnologie |
| Description | The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailor... |
| Features |
Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode.
M
F
I
H
2
Drain
Q
Q
N
1 2 3
REF. A B C D E F G H Millimeter Min. Max. 10.6 1.58 1.82 1.20 1.45 14.22 16.50 3.50 4.00 2.70 3.30 1.20 1.78 0.50 1.00 REF. I J K L M N Q Millimeter Min. Max. 12.70 14.70 3.60 4.80 1.14 1.40 5.84 6.86 2.03 2.90 0.35 0.64 2.34 2.74
1
Gate
3
Source
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous... |
| Document |
 SSE4N60 Data Sheet
PDF 726.55KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSE04N60SL |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |
|
| 2 | SSE04N65SL |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |
|
| 3 | SSE07N80SL |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |
|
| 4 | SSE08N60SL |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |
|
| 5 | SSE102N10SV-C |
SeCoS |
N-Channel Enhancement Mode Power MosFET |
|