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TSF10H100C |
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| Part Number | TSF10H100C |
| Manufacturer | Taiwan Semiconductor |
| Description | RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 12 10 8 6 4 2 0 0 25 50 75 100 125 150 INSTANTANEOUS FORWARD CURRENT (A) FIG. 2 TYPICAL FORWA... |
| Features |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
- Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition
ITO-220AB
MECHANICAL DATA
Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Terminal: Matte tin plated leads, solderable per JESD22-B102 M... |
| Document |
 TSF10H100C Data Sheet
PDF 238.30KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TSF10H120C |
Taiwan Semiconductor |
Trench Schottky Rectifier |
|
| 2 | TSF10H150C |
Taiwan Semiconductor |
Trench Schottky Rectifier |
|
| 3 | TSF10H200C |
Taiwan Semiconductor |
Trench Schottky Rectifier |
|
| 4 | TSF10N60C |
Thinki Semiconductor |
600V Insulated N-Channel Type Power MOSFET |
|
| 5 | TSF10N60M |
Truesemi |
600V N-Channel MOSFET |
|