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3DG1008 |
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| Part Number | 3DG1008 |
| Manufacturer | LZG |
| Description | The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Figure 1. Top View S 1 8 D S 2 7 D S 3 D 6 D G 4 5 D P0093-01 (1) Typical RθJA = 41°C/W on ... |
| Features |
Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY
Typical Values at 25ºC unless otherwise stated VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (4.5V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 40 7.7 2.4 VGS = 4.5V VGS = 10V 1.9 7.5 5.3 UNIT V nC nC mΩ mΩ V
• • • • • • • • 2 ORDERING INFORMATION APPLICATIONS • • • DC-DC Conversion Secondary Side Synchronous Rectifier Battery Motor Control Device CSD185... |
| Document |
 3DG1008 Data Sheet
PDF 200.99KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3DG100 |
Shaanxi Qunli |
NPN Silicon High Frequency Low Power Transistor |
|
| 2 | 3DG101 |
ETC |
Silicon NPN high frequency low power transistor |
|
| 3 | 3DG101 |
Qunli Electric |
NPN Silicon High Frequency Low Power Transistor |
|
| 4 | 3DG102 |
Shaanxi Qunli |
NPN Silicon High Frequency Low Power Transistor |
|
| 5 | 3DG110 |
Qunli Electric |
NPN Silicon High Frequency Low Power Transistor |
|