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IRGP4263PBF |
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| Part Number | IRGP4263PBF |
| Manufacturer | International Rectifier |
| Description | IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A G E C G G n-channel Applications • ... |
| Features |
Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.5µs short circuit SOA Lead-free, RoHS compliant Base part number IRG7P4263PbF IRG7P4263-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=20V Clamped Inductive Load Current, VGE=20V Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operati... |
| Document |
 IRGP4263PBF Data Sheet
PDF 887.41KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRGP4263-EPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 2 | IRGP4263D-EPbF |
International Rectifier |
Insulated Gate Bipolar Transistor |
|
| 3 | IRGP4263DPbF |
International Rectifier |
Insulated Gate Bipolar Transistor |
|
| 4 | IRGP4262D-EPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 5 | IRGP4262DPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|