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MT4C1M16C3 |
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| Part Number | MT4C1M16C3 |
| Manufacturer | Micron |
| Description | The 1 Meg x 16 DRAM is a randomly accessed, solidstate memory containing 16,777,216 bits organized in a x16 configuration. The 1 Meg x 16 DRAM has both BYTE WRITE and WORD WRITE access cycles via two ... |
| Features |
• JEDEC- and industry-standard x16 timing, functions, pinouts, and packages • High-performance, low-power CMOS silicon-gate process • Single power supply (+3.3V ±0.3V or 5V ±0.5V) • All inputs, outputs and clocks are TTL-compatible • Refresh modes: RAS#-ONLY, CAS#-BEFORE-RAS# (CBR) and HIDDEN • Optional self refresh (S) for low-power data retention • BYTE WRITE and BYTE READ access cycles • 1,024-cycle refresh (10 row, 10 column addresses) • FAST-PAGE-MODE (FPM) access MT4C1M16C3, MT4LC1M16C3 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets ... |
| Document |
 MT4C1M16C3 Data Sheet
PDF 490.71KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MT4C1M16E5 |
Micron Technology |
EDO DRAM |
|
| 2 | MT4C1004J883C |
Austin Semiconductor |
4 MEG x 1 DRAM FAST PAGE MODE |
|
| 3 | MT4C1024 |
Micron Technology |
1M x 1 DRAM |
|
| 4 | MT4C1024-883C |
Micron Technology |
1M x 1 DRAM |
|
| 5 | MT4C1024E |
Micron Technology |
(MT4C1024E / MT4C4256E) 1 MEG PAGE MODE DRAM |
|