HGTP10N120BN Fairchild Semiconductor N-Channel IGBT Datasheet, en stock, prix

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HGTP10N120BN

Fairchild Semiconductor
HGTP10N120BN
HGTP10N120BN HGTP10N120BN
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Part Number HGTP10N120BN
Manufacturer Fairchild Semiconductor
Description HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. The...
Features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49290. Features
• 35A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC
• Short Circuit Rating
• Low Conduc...

Document Datasheet HGTP10N120BN Data Sheet
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