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HGTG30N60C3D |
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| Part Number | HGTG30N60C3D |
| Manufacturer | Fairchild Semiconductor |
| Description | HGTG30N60C3D Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best feature... |
| Features |
of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49014.
Features
• 63A, 600V at TC = 25oC • Typical Fall Time . . . . ... |
| Document |
 HGTG30N60C3D Data Sheet
PDF 144.62KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HGTG30N60C3 |
Intersil Corporation |
N-Channel IGBT |
|
| 2 | HGTG30N60C3D |
Intersil Corporation |
N-Channel IGBT |
|
| 3 | HGTG30N60C3D |
ON Semiconductor |
N-Channel IGBT |
|
| 4 | HGTG30N60 |
Fairchild Semiconductor |
600V Planar IGBT Chip |
|
| 5 | HGTG30N60A4 |
Fairchild Semiconductor |
N-Channel IGBT |
|