Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
HGTG30N60A4D |
Click to view a larger image
| Part Number | HGTG30N60A4D |
| Manufacturer | Intersil Corporation |
| Description | HGTG30N60A4D Data Sheet January 2000 File Number 4830 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the ... |
| Features |
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The diode used in anti-parallel is the development type TA49373. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49345.
... |
| Document |
 HGTG30N60A4D Data Sheet
PDF 100.45KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HGTG30N60A4 |
Fairchild Semiconductor |
N-Channel IGBT |
|
| 2 | HGTG30N60A4 |
Intersil Corporation |
N-Channel IGBT |
|
| 3 | HGTG30N60A4 |
ON Semiconductor |
SMPS IGBT |
|
| 4 | HGTG30N60A4D |
Fairchild Semiconductor |
N-Channel IGBT |
|
| 5 | HGTG30N60A4D |
ON Semiconductor |
N-Channel IGBT |
|