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HGT1S20N35G3VLS |
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| Part Number | HGT1S20N35G3VLS |
| Manufacturer | Intersil Corporation |
| Description | This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between ... |
| Features |
• Logic Level Gate Drive • Internal Voltage Clamp • ESD Gate Protection • TJ = 175oC • Ignition Energy Capable Description This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit. PACKAGING AVAILABI... |
| Document |
 HGT1S20N35G3VLS Data Sheet
PDF 106.91KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HGT1S20N35G3VL |
Fairchild Semiconductor |
N-Channel IGBT |
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| 2 | HGT1S20N35G3VL |
Intersil Corporation |
N-Channel IGBT |
|
| 3 | HGT1S20N35G3VLS |
Fairchild Semiconductor |
N-Channel IGBT |
|
| 4 | HGT1S20N36G3VL |
Fairchild Semiconductor |
Voltage Clamping IGBTs |
|
| 5 | HGT1S20N36G3VLS |
Fairchild Semiconductor |
Voltage Clamping IGBTs |
|