This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for th.
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175oC
• Ignition Energy Capable
Description
This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit.
PACKAGING AVAILABI.
This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HGT1S20N35G3VLS |
Fairchild Semiconductor |
N-Channel IGBT | |
2 | HGT1S20N35G3VLS |
Intersil Corporation |
N-Channel IGBT | |
3 | HGT1S20N36G3VL |
Fairchild Semiconductor |
Voltage Clamping IGBTs | |
4 | HGT1S20N36G3VLS |
Fairchild Semiconductor |
Voltage Clamping IGBTs | |
5 | HGT1S20N60A4S9A |
Fairchild Semiconductor |
SMPS Series N-Channel IGBTs | |
6 | HGT1S20N60B3S |
Fairchild Semiconductor |
N-Channel IGBT | |
7 | HGT1S20N60B3S |
Intersil Corporation |
N-Channel IGBT | |
8 | HGT1S20N60C3R |
HARRIS |
N-Channel IGBTs | |
9 | HGT1S20N60C3RS |
Intersil |
N-Channel IGBTs | |
10 | HGT1S20N60C3RS |
HARRIS |
N-Channel IGBTs | |
11 | HGT1S20N60C3S |
Fairchild Semiconductor |
45A/ 600V/ UFS Series N-Channel IGBT | |
12 | HGT1S20N60C3S |
Intersil Corporation |
45A/ 600V/ UFS Series N-Channel IGBT |