ST2SD655 |
Part Number | ST2SD655 |
Manufacturer | SEMTECH |
Description | ST 2SD655 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, D, E and F, according to its DC current gain. On special ... |
Features |
kdown Voltage at IC=10μA Collector to Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=20V Base Emitter Voltage at VCE=1V, IC=150mA Collector Emitter Saturation Voltage at IC=500mA, IB=50mA Gain Bandwidth Product at VCE=1V, IC=150mA fT 250 MHz VCE(sat) 0.15 0.5 V VBE 1 V ICBO 1 μA V(BR)EBO 5 V V(BR)CEO 15 V V(BR)CBO 30 V hFE hFE hFE 250 400 600 500 800 1200 Min. Typ. Max. Unit
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
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Dated ... |
Document |
ST2SD655 Data Sheet
PDF 163.56KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ST2SD1303 |
SEMTECH ELECTRONICS |
NPN Silicon Epitaxial Planar Transistor | |
2 | ST2SD1616 |
SEMTECH ELECTRONICS |
NPN Silicon Transistor | |
3 | ST2SD1616A |
SEMTECH ELECTRONICS |
NPN Silicon Transistor | |
4 | ST2SD1691T |
SEMTECH |
NPN Silicon Epitaxial Power Transistor | |
5 | ST2SD1817R |
SEMTECH |
NPN Silicon Transistor |