35N08 - Inchange Semiconductor

35N08 N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 35N08 ·FEATURES ·Drain Current ID= 35A@ TC=25℃ ·Drain Source Voltage- : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.055Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM.

Features

·Drain Current ID= 35A@ TC=25℃
·Drain Source Voltage- : VDSS= 80V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.055Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching power supplies,converters,AC and DC motor controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 80 ±30 V V ID Drain Current-Continuous 35 A IDM Drain Current-Single Plused 100 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃
·THERMAL CHARACTERISTICS SYMBOL PARAM.