PBSS5230PAP |
Part Number | PBSS5230PAP |
Manufacturer | NXP (https://www.nxp.com/) |
Description | PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4230PANP. NPN/NPN... |
Features |
• • • • • • Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications • • • • • Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Symbol Per transistor VCEO IC ICM Per transistor RCEsat collector-emitter saturation resistance IC = -1 A; IB = -0.1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 ... |
Document |
PBSS5230PAP Data Sheet
PDF 292.12KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | PBSS5230PAP |
nexperia |
2A PNP/PNP low VCEsat (BISS) transistor | |
2 | PBSS5230QA |
NXP |
PNP low VCEsat (BISS) transistor | |
3 | PBSS5230QA |
nexperia |
PNP Transistor | |
4 | PBSS5230T |
NXP |
PNP Transistor | |
5 | PBSS5220PAPS |
nexperia |
PNP/PNP Transistor |