PBSS5230PAP NXP PNP/PNP low VCEsat (BISS) transistor Datasheet, en stock, prix

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PBSS5230PAP

NXP
PBSS5230PAP
PBSS5230PAP PBSS5230PAP
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Part Number PBSS5230PAP
Manufacturer NXP (https://www.nxp.com/)
Description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4230PANP. NPN/NPN...
Features





• Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications




• Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Symbol Per transistor VCEO IC ICM Per transistor RCEsat collector-emitter saturation resistance IC = -1 A; IB = -0.1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 ...

Document Datasheet PBSS5230PAP Data Sheet
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