2SC3355 Inchange Semiconductor Silicon NPN RF Transistor Datasheet, en stock, prix

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2SC3355

Inchange Semiconductor
2SC3355
2SC3355 2SC3355
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Part Number 2SC3355
Manufacturer Inchange Semiconductor
Description ·Low Noise NF = 1.5dB TYP @ VCE=10V,IC=7mA, f=1GHz •High Power Gain ︱S21e︱2 = 9.5dB TYP @ VCE=10V,IC=20mA,f=1GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APP...
Features .1 uA ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 uA hFE DC Current Gain IC= 20mA; VCE= 10V 50 150 250 fT Current-Gain—Bandwidth Product VCE=10V,IC=20mA,f=1GHz 6.5 GHz Cre Output Capacitance VCB=10V,IE=0mA,f=1MHz 0.65 pF | S21e |2 Insertion Power Gain NF Noise Figure hFE Classification Class A-B Marking hFE 60-100 VCE=10V,IC=20mA,f=1GHz VCE = 10 V, IC = 7 mA, f = 1.0 GHz VCE=10V,IC=40mA,f=1GHz C-D 100-140 E-F K9C 140-180 G-H 180-220 9.5 dB 1.5 2 dB 2.4 I 220-250 Notice: ISC reserves the rights to make changes of the content herein the datasheet at a...

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