2SA1338 |
Part Number | 2SA1338 |
Manufacturer | Kexin |
Description | SMD Type TransistIoCrs PNP Transistors 2SA1338 Features Adoption of FBET process. High breakdown voltage : VCEO=-50V. Large current capacitiy and high fT. Ultrasmall-sized package permitting sets t... |
Features |
Adoption of FBET process. High breakdown voltage : VCEO=-50V. Large current capacitiy and high fT. Ultrasmall-sized package permitting sets to be smallsized, slim. ● Complementary to 2SC3392 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Electrical Characteristics Ta = 25 Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter c... |
Document |
2SA1338 Data Sheet
PDF 1.41MB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SA1330 |
NEC |
PNP SILICON EPITAXIAL TRANSISTOR | |
2 | 2SA1330 |
Kexin |
PNP Silicon Transistor | |
3 | 2SA1331 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
4 | 2SA1331 |
Kexin |
PNP Epitaxial Planar Silicon Transistors | |
5 | 2SA1332 |
SavantIC |
SILICON POWER TRANSISTOR |