AP6679GR |
Part Number | AP6679GR |
Manufacturer | Advanced Power Electronics |
Description | Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-262(R) The TO-262 pac... |
Features |
rature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.4 62 Unit ℃/W ℃/W
Data and specifications subject to change without notice
1 2008012303
Free Datasheet http://www.datasheet4u.com/
AP6679GR
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-30A VGS=-4.5V, ID=-24A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gat... |
Document |
AP6679GR Data Sheet
PDF 165.21KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AP6679GH |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | AP6679GH-HF |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | AP6679GI |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | AP6679GI-HF |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | AP6679GJ |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |