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2SA1681 |
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| Part Number | 2SA1681 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1681 Power Amplifier Applications Power Switching Applications 2SA1681 Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC ... |
| Features |
etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1 2006-11-09
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdow... |
| Document |
 2SA1681 Data Sheet
PDF 157.16KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1680 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 2 | 2SA1682 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 3 | 2SA1683 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors |
|
| 4 | 2SA1685 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SA1687 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|