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2SA1621 |
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| Part Number | 2SA1621 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1621 Audio Power Amplifier Applications • High hFE: hFE = 100 to 320 • Complementary to 2SC4210 Unit: mm Absolute Maximum Rat... |
| Features |
g Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
Symbol
Test Condition
ICBO
VCB = −35 V, IE = 0
IEBO
VEB = −5 V, IC = 0
V (BR) CEO IC = −10 mA, IB = 0
hFE (1) (Note)
VCE = −1 V, IC = −100 mA
hFE (2) VCE = −1 V, IC = −700 mA
VCE (... |
| Document |
 2SA1621 Data Sheet
PDF 204.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1620 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SA1621 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 3 | 2SA1621 |
LZG |
SILICON PNP TRANSISTOR |
|
| 4 | 2SA1621 |
Kexin |
PNP Transistors |
|
| 5 | 2SA1624 |
Sanyo Semicon Device |
PNP EPITAXIAL PLANAR SILICON TRANSISTOR |
|