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2N5880 & 2N5882 Complementary Power Transistors General-purpose power amplifier and switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 7.0A • Execellent DC current Gain hFE = 20 - 100 at IC = 6.0A Pin 1. Base 2. Emitter Collector(Case) Maximum Ratings Dimensions Minimum Maximum A 38.75 39.96 B.
• Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 7.0A
• Execellent DC current Gain hFE = 20 - 100 at IC = 6.0A
Pin 1. Base 2. Emitter Collector(Case)
Maximum Ratings
Dimensions Minimum Maximum
A
38.75
39.96
B
19.28
22.23
C
7.96
9.28
D
11.18
12.19
E
25.20
26.67
F
0.92
1.09
G
1.38
1.62
H
29.90
30.40
I
16.64
17.30
J
3.88
4.36
K
10.67
11.18
Dimensions : Millimetres
Characteristic
Symbol
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage Collector Current-Continuous
-Peak Base Current Total Power Dissipat.
2N5880 - Savantic
·With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5881 2N5882 APPLICATIONS ·For general-purpose.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N5881 |
Mospec Semiconductor |
POWER TRANSISTORS |
|
| 2 | 2N5881 |
SavantIC |
Silicon NPN Power Transistors |
|
| 3 | 2N5881 |
Seme LAB |
Bipolar NPN Device |
|
| 4 | 2N5882 |
NTE |
Silicon NPN Power Transistor |
|
| 5 | 2N5882 |
ON Semiconductor |
Silicon NPN High-Power Transistor |
|
| 6 | 2N5882 |
Multicomp |
Complementary Power Transistor |
|
| 7 | 2N5882 |
SavantIC |
Silicon NPN Power Transistors |
|
| 8 | 2N5883 |
Mospec Semiconductor |
POWER TRANSISTORS |
|
| 9 | 2N5883 |
Digitron Semiconductors |
PNP SILICON POWER TRANSISTORS |
|
| 10 | 2N5883 |
TT |
SILICON EPITAXIAL PNP TRANSISTOR |
|
| 11 | 2N5883 |
ON Semiconductor |
Complementary Silicon High-Power Transistors |
|
| 12 | 2N5883 |
Savantic |
Silicon PNP Power Transistors |
|