UTC2SD468 |
Part Number | UTC2SD468 |
Manufacturer | Unisonic Technologies |
Description | UTC 2SD468 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER FEATURES *Low frequency power amplifier *Complement to 2SB562 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RA... |
Features |
*Low frequency power amplifier *Complement to 2SB562
1
TO-92
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Collector Power Dissipation Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO Ic Ic(peak) PC Tj TSTG
VALUE
25 20 5 1 1.5 0.9 150 -55 ~ +150
UNIT
V V V A A W °C °C
www.DataSheet.co.kr
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector to base breakdown voltage Collector... |
Document |
UTC2SD468 Data Sheet
PDF 152.31KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UTC2SD882S |
Unisonic Technologies |
NPN EPITAXIAL SILICON TRANSISTOR | |
2 | UTC2SA1015 |
Unisonic Technologies |
PNP EPITAXIAL SILICON TRANSISTOR | |
3 | UTC2SA1020 |
Unisonic Technologies |
PNP EPITAXIAL SILICON TRANSISTOR | |
4 | UTC2SA684 |
Unisonic Technologies |
PNP EPITAXIAL PLANAR TRANSISTOR | |
5 | UTC2SA733 |
Unisonic Technologies |
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR |