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RJP30H2DPK-M0 |
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| Part Number | RJP30H2DPK-M0 |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th... |
| Features |
Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Outline RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 Absolute Maximum Ratings Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature S... |
| Document |
 RJP30H2DPK-M0 Data Sheet
PDF 221.13KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | RJP30H2A |
Renesas |
Silicon N-Channel IGBT |
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| 2 | RJP30H1 |
Renesas |
N-Channel IGBT |
|
| 3 | RJP30H1DPD |
Renesas |
N-Channel IGBT |
|
| 4 | RJP30H1DPP-M0 |
Renesas |
N-Channel IGBT |
|
| 5 | RJP3053DPP |
Renesas Technology |
IGBT |
|