RJK6012DPE |
Part Number | RJK6012DPE |
Manufacturer | Renesas (https://www.renesas.com/) |
Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th... |
Features |
Low on-resistance RDS(on) = 0.77 typ. (at ID = 5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching R07DS0445EJ0300 (Previous: REJ03G1481-0200) Rev.3.00 Jun 17, 2011 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain 1 G 2 3 S Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance... |
Document |
RJK6012DPE Data Sheet
PDF 141.99KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK6012DPP |
Renesas |
N-Channel Power MOSFET | |
2 | RJK6012DPP-A0 |
Renesas |
High Speed Power Switching MOSFET | |
3 | RJK6011DJA |
Renesas |
High Speed Power Switching MOS FET | |
4 | RJK6011DJE |
Renesas |
N-Channel Power MOSFET | |
5 | RJK6013DPE |
Renesas Technology |
Silicon N-Channel MOSFET |