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WFU2N60B |
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| Part Number | WFU2N60B |
| Manufacturer | Winsemi |
| Description | This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche... |
| Features |
� � � � � 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V Ultra-low Gate Charge(Typical 9nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply .
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous ... |
| Document |
 WFU2N60B Data Sheet
PDF 604.30KB |
| Distributor | Stock | Price | Buy |
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