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W11NB80 |
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| Part Number | W11NB80 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with... |
| Features |
V GS ID ID I DM ( • ) P tot dv/dt( 1 ) Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o Value 800 800 ± 30 11 6.9 44 190 1.52 4 -65 to 150 150 I SD ≤ 11A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un it V V V A A A W W /o C V/ns o o C C ( •) Pulse width limited by safe operating area Ju... |
| Document |
 W11NB80 Data Sheet
PDF 145.70KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | W11NK100Z |
STMicroelectronics |
STW11NK100Z |
|
| 2 | W11NK90Z |
STMicroelectronics |
STW11NK90Z |
|
| 3 | W11NM80 |
STMicroelectronics |
N-CHANNEL Power MOSFET |
|
| 4 | W1185LC300 |
IXYS |
Rectifier Diode |
|
| 5 | W1185LC380 |
IXYS |
Rectifier Diode |
|