VFT4045BP |
Part Number | VFT4045BP |
Manufacturer | Vishay (https://www.vishay.com/) |
Description | VFT4045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.28 V at IF = 5 A TMBS ® ITO-220AC FEATURES • Trench ... |
Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2011/65/EU 2 1 • Halogen-free according to IEC 61249-2-21 definition VFT4045BP PIN 1 PIN 2 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(DC) VRRM IFSM VF at IF = 40 A TOP max. (AC mode) TJ max. (DC forward current) 40 A 45 V 240 A 0.51 V 150 °C 200 °C Case: ITO-22... |
Document |
VFT4045BP Data Sheet
PDF 140.99KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VFT4045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
2 | VFT4045C-M3 |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
3 | VFT4060C |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
4 | VFT45-28 |
Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode | |
5 | VFT10200C |
Vishay |
Trench MOS Barrier Schottky Rectifier |