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2SC3604 |
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| Part Number | 2SC3604 |
| Manufacturer | NEC |
| Description | DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to... |
| Features |
• Low noise : NF = 1.6 dB TYP. @ f = 2.0 GHz • High power gain : GA = 12 dB TYP. @ f = 2.0 GHz C 3.8 MIN. 3.8 MIN. B PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT (TC = 25 °C) Tj Tstg RATING 20 10 1.5 65 580 200 -65 to +150 UNIT V V V mA mW °C °C E PIN CONNECTIONS E: Emitter C: Collector 0.5 ± 0.05 B: Base 2.55 ± 0.2 φ 2.1 1.8 MAX. 0.55 3.8 MIN. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) 45 ° ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARA... |
| Document |
 2SC3604 Data Sheet
PDF 94.47KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3600 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SC3601 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 3 | 2SC3603 |
NEC |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 4 | 2SC3604 |
New Jersey Semi-Conductor |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 5 | 2SC3605 |
Toshiba Semiconductor |
Silicon NPN Epitaxial Planar Type Transistor |
|