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2SC3601 |
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| Part Number | 2SC3601 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number : EN1766D 2SA1407 / 2SC3601 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1407 / 2SC3601 Applications • • • • Ultrahigh-Definition CRT Display ... |
| Features |
• • • • • High fT : fT typ=400MHz. High breakdown voltage : VCEO≥200V. Small reverce transfer capacitance and excellent high frequency characteristics : Cre=2.0pF(NPN), 2.5pF(PNP). Complementary PNP and NPN types. Adoption of FBET process. Specifications ( ) : 2SA1407 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings (--)200 (--)200 (--)4 (--)150 ... |
| Document |
 2SC3601 Data Sheet
PDF 48.35KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3600 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SC3603 |
NEC |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 3 | 2SC3604 |
NEC |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 4 | 2SC3604 |
New Jersey Semi-Conductor |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 5 | 2SC3605 |
Toshiba Semiconductor |
Silicon NPN Epitaxial Planar Type Transistor |
|