2SC3413 - Hitachi Semiconductor

2SC3413 Silicon NPN Epitaxial Transistor

2SC3413 Silicon NPN Epitaxial Application • Low frequency low noise amplifier • HF amplifier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SC3413 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage tempera.

Features

0.75 0.2 — 3.5 5.0 Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA V V MHz pF dB VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 mA, Rg = 1 kΩ, f = 1 kHz 1. The 2SC3413 is grouped by h FE as follows. C 160 to 320 D 250 to 500 See characteristic curves of 2SC458(LG). 2 2SC3413 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 300 200 100 0 50 100 Ambient Temperature Ta (°C) 150 3 4.2 Max.