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V30100C |
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| Part Number | V30100C |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.vishay.com V30100C, VI30100C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A TO-220AB TMBS ® TO-262AA K V30100C 3 2 1... |
| Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM IFSM 100 V 160 A VF at IF = 15 A 0.63 V TJ max. 150 °C Package TO-220AB, TO-262AA Diode variation Common cathode... |
| Document |
 V30100C Data Sheet
PDF 133.72KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | V30100C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 2 | V30100PW-M3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 3 | V30100S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 4 | V30100S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 5 | V30100SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier |
|