This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and saf.
x
–5.9 A,
–30 V. RDS(ON) = m: @ VGS =
–10 V RDS(ON) = m: @ VGS =
– 4.5 V x Extended VGSS range (
–25V) for battery applications x ESD protection diode (note 3) x High performance trench technology for extremely low RDS(ON) x High power and current handling capability
D2 D
D2 D
DD1 D1 D
5 6 7
Q1
4 3 2
Q2
SO-8
Pin 1 SO-8
G2 S2 S
G1 S1 G
S
8
1
S
Absolute Maximum Ratings
Symbol
VDS VGS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous
– Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
–30 +25
(Note 1a)
Units
V V A W
–.9
–50 1.6 1.0 0.9
–55 to +.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MT4953 |
matrix microtech |
Dual P-Channel High Density Trench MOSFET | |
2 | MT4953 |
ETC |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | MT4953 |
Mos-tech Semiconductor |
P-Channel Enhancement Mode Field Effect Transistor | |
4 | MT4914 |
MOS-TECH |
Dual N-Channel Power MOSFET | |
5 | MT4936 |
MOS-TECH |
N-Channel Power MOSFET | |
6 | MT4946 |
MOS-TECH |
N-Channel Power MOSFET | |
7 | MT4966 |
MOS-TECH |
Dual N-Channel Powe MOSFET | |
8 | MT4976 |
MOS-TECH |
MOSFET | |
9 | MT49H16M16 |
Micron |
2 Meg x 16 x 8 Banks Reduced Latency DRAM | |
10 | MT49H16M18 |
Micron Technology |
16 Meg x 18 x 8 Banks CIO RLDRAM 2 | |
11 | MT49H16M18C |
Micron Technology |
SIO RLDRAM 2 | |
12 | MT49H16M36 |
Micron |
576Mb CIO Reduced Latency |