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IDH03SG60C |
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| Part Number | IDH03SG60C |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | 3rd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature in... |
| Features |
• Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 20mA2) • Optimized for high temperature operation • Lowest Figure of Merit QC/IF Product Summary VDC QC IF; TC< 130 °C IDH03SG60C 600 V 3.2 nC 3A thinQ! 3G Diode designed for fast switching applications like: • SMPS e.g.; CCM PFC • Motor Drives; Solar Applicatio... |
| Document |
 IDH03SG60C Data Sheet
PDF 507.31KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IDH03G65C5 |
Infineon |
Silicon Carbide Diode |
|
| 2 | IDH02G120C5 |
Infineon |
Diode |
|
| 3 | IDH02G65C5 |
Infineon |
650V SiC Schottky Diode |
|
| 4 | IDH02SG120 |
Infineon Technologies |
Schottky Diode |
|
| 5 | IDH04G65C5 |
Infineon |
Silicon Carbide Diode |
|