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2SA1943 |
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| Part Number | 2SA1943 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=- 230V(Min) ·Complement to Type 2SC5200 ·Minimum Lot-to-Lot variations for robust device performa... |
| Features |
DITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
-230
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -8.0A; IB= -0.8A
-3.0
V
VBE(on)
Base-Emitter On Voltage
IC= -7A; VCE= -5V
-1.5
V
ICBO
Collector Cutoff Current
VCB= -230V; IE= 0
-5
μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-5
μA
hFE-1
DC Current Gain
IC= -1A; VCE= -5V
55
160
hFE-2
DC Current Gain
IC= -7A; VCE= -5V
35
COB
Output Capacitance
IE=0; VCB= -10V; f= 1.0MHz
1100
pF
fT
Current-Gain—Bandwidth Product
IC=-1A ; VCE= -5V
16
MHz
hFE-1 Classificatio... |
| Document |
 2SA1943 Data Sheet
PDF 204.72KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1940 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SA1940 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SA1940 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 4 | 2SA1941 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 5 | 2SA1941 |
JILIN SINO |
PNP Epitaxial Silicon Transistor |
|