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2SA1651 |
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| Part Number | 2SA1651 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage VCEO= -100V(Min) ·Fast switching speed ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC... |
| Features |
lector-Emitter Saturation Voltage IC= -4A; IB= -0.2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A; IB= -0.3A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= -4A; IB= -0.2A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= -6A; IB= -0.3A
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A; VCE= -2V
hFE-2
DC Current Gain
IC= -1.5A; VCE= -2V
hFE-3
DC Current Gain
IC= -4A; VCE= -2V
MIN
TYP.
MAX
UNIT
-0.3 V
-0.5 V
-1.2 V
-1.5 V
-10 μA
-10 μA
100
100
400
60
hFE-2 Classifications
M
L
K... |
| Document |
 2SA1651 Data Sheet
PDF 213.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1650 |
NEC |
PNP SILICON EPITAXIAL TRANSISTOR |
|
| 2 | 2SA1651 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SA1654 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SA1656 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SA1657 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|