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MN63112S |
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| Part Number | MN63112S |
| Manufacturer | Panasonic Semiconductor |
| Description | Pin No. 1 2 3 4 5 6 7 8 Symbol CS SK DI DO GND ORG N.C. VCC Pin Name Chip select Serial clock Data input Data output Ground Memory configuration selection No connection Power supply voltage MN63112S... |
| Features |
Choice of memory organizations: 256 × 8 bits and 128 × 16 bits Floating gate memory cells Function blocking erroneous writes Low power consumption - Reads: max. 6.6 mW for VCC = 3.3 V - Standby: max. 66 µW for VCC = 3.3 V Built-in self-timer for use in automatically erasing and writing Built-in error correction circuit that guarantees 105 write cycles 10-year data preservation period
Applications
Keyless entry systems, cordless telephones, storage for recognition and adjustment data for terminals, etc.
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MN63112S
Block Diagram
EEPROMs
8
Memory array ORG 6 128 × 16 or... |
| Document |
 MN63112S Data Sheet
PDF 62.17KB |
| Distributor | Stock | Price | Buy |
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