MN63121 - Panasonic Semiconductor

MN63121 1K-Bit EEPROM

Pin No. 1 2 3 4 6 7 Symbol CS SCK DI DO RESET RDY/BUSY Pin Name Chip select input Serial clock input Data input Data output Reset input Busy output MN63121 Electrical Characteristics VCC=1.8 to 5.5V, Ta=–10˚C to +70˚C 2 to 3 V Operation 5 V Operation Parameter Power supply voltage Input leakage current at "L" level Input leakage current at "H" level Outp.

Features

Memory organization: 64 × 16 bits Floating gate memory cells Function blocking erroneous writes Low power consumption - Reads: max. 6.6 mW for VCC = 3.3 V - Standby: max. 66 µW for VCC = 3.3 V Built-in self-timer for use in automatically erasing and writing Built-in error correction circuit that guarantees 105 write cycles 10-year data preservation period Applications Keyless entry systems, cordless telephones, storage for recognition and adjustment data for terminals, etc. www.DataSheet4U.com 1 MN63121 Block Diagram EEPROMs 8 Memory array 64 × 16 5 GND VCC Address decoder Error co.