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HY5S5B6GLF-SE |
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| Part Number | HY5S5B6GLF-SE |
| Manufacturer | Hynix Semiconductor |
| Description | and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / Apr. 2006 1 256Mbit (16Mx16bit) Mobile SDR M... |
| Features |
● Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK) ● ● MULTIBANK OPERATION - Internal 4bank operation - During burst Read or Write operation, burst Read or Write for a different bank is performed. - During burst Read or Write operation, a different bank is activated and burst Read or Write for that bank is performed - During auto precharge burst Read or Write, burst Read or Write for a different bank is performed ● Power Supply Voltage : VDD = 1.8V, VDDQ = 1.8V LVCMOS compatible I/O Interface Low Voltage int... |
| Document |
 HY5S5B6GLF-SE Data Sheet
PDF 2.99MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HY5S5B6GLF-S |
Hynix Semiconductor |
256Mbit (16Mx16bit) Mobile SDR Memory |
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| 2 | HY5S5B6GLF-6 |
Hynix Semiconductor |
256Mbit (16Mx16bit) Mobile SDR Memory |
|
| 3 | HY5S5B6GLF-6E |
Hynix Semiconductor |
256Mbit (16Mx16bit) Mobile SDR Memory |
|
| 4 | HY5S5B6GLF-H |
Hynix Semiconductor |
256Mbit (16Mx16bit) Mobile SDR Memory |
|
| 5 | HY5S5B6GLF-HE |
Hynix Semiconductor |
256Mbit (16Mx16bit) Mobile SDR Memory |
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