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HY5S5B6ELFP-HE |
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| Part Number | HY5S5B6ELFP-HE |
| Manufacturer | Hynix Semiconductor |
| Description | and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / Jul. 2005 1 1 256Mbit (16Mx16bit) Mobile SDR... |
| Features |
Standard SDRAM Protocol
● ● Programmable CAS latency of 1, 2 or 3 -25oC ~ 85oC Operation Package Type : 54ball, 0.8mm pitch FBGA (Lead Free, Lead) Internal 4bank operation Power Supply Voltage : VDD = 1.8V, VDDQ = 1.8V LVCMOS compatible I/O Interface Low Voltage interface to reduce I/O power Low Power Features PASR(Partial Array Self Refresh) Auto TCSR (Temperature Compensated Self Refresh) DS (Drive Strength) Deep Power Down Mode ● ● ● ● - HY5S5B6ELFP : Lead Free - HY5S5B6ELF : Lead ● ● - 256M SDRAM ORDERING INFORMATION Part Number HY5S5B6ELF-HE HY5S5B6ELF-SE HY5S5B6ELFP-HE HY5S5B6... |
| Document |
 HY5S5B6ELFP-HE Data Sheet
PDF 241.92KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HY5S5B6ELFP-SE |
Hynix Semiconductor |
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O |
|
| 2 | HY5S5B6ELF-HE |
Hynix Semiconductor |
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O |
|
| 3 | HY5S5B6ELF-SE |
Hynix Semiconductor |
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O |
|
| 4 | HY5S5B6GLF-6 |
Hynix Semiconductor |
256Mbit (16Mx16bit) Mobile SDR Memory |
|
| 5 | HY5S5B6GLF-6E |
Hynix Semiconductor |
256Mbit (16Mx16bit) Mobile SDR Memory |
|