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HY5S2B6DLFP-BE |
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| Part Number | HY5S2B6DLFP-BE |
| Manufacturer | Hynix Semiconductor |
| Description | and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.3 / Feb. 2005 1 1HY5S2B6DLF(P)-xE... |
| Features |
Standard SDR Protocol Internal 4bank operation ● Voltage : VDD = 1.8V, VDDQ = 1.8V ● LVCMOS compatible I/O Interface ● Low Voltage interface to reduce I/O power ● Low Power Features - PASR(Partial Array Self Refresh) - Auto TCSR (Temperature Compensated Self Refresh) - DS (Drive Strength) - Deep Power Down Mode ● ● ● Programmable CAS latency of 1, 2 or 3 Pakage Type : 54Ball FBGA - HY5S2B6DLF : Lead - HY5S2B6DLFP : Lead Free ORDERING INFORMATION Part Number HY5S2B6DLF-SE 105MHz HY5S2B6DLFP-SE 4banks x 2Mb x 16 HY5S2B6DLF-BE 66MHz HY5S2B6DLFP-BE 2 Lead Free LVCMOS Lead 3 Lead Free Clock Frequ... |
| Document |
 HY5S2B6DLFP-BE Data Sheet
PDF 791.81KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HY5S2B6DLFP-SE |
Hynix Semiconductor |
4Banks x 2M x 16bits Synchronous DRAM |
|
| 2 | HY5S2B6DLF-BE |
Hynix Semiconductor |
4Banks x 2M x 16bits Synchronous DRAM |
|
| 3 | HY5S2B6DLF-SE |
Hynix Semiconductor |
4Banks x 2M x 16bits Synchronous DRAM |
|
| 4 | HY5S5B2BLF-6E |
Hynix Semiconductor |
256M (8Mx32bit) Mobile SDRAM |
|
| 5 | HY5S5B2BLF-HE |
Hynix Semiconductor |
256M (8Mx32bit) Mobile SDRAM |
|