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IPB031NE7N3G |
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| Part Number | IPB031NE7N3G |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | IPB031NE7N3 G OptiMOSTM3 Power-Transistor Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters • Excellent gate charge x R DS(on) pr... |
| Features |
• Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPB031NE7N3 G Product Summary V DS R DS(on),max ID 75 3.1 100 V mΩ A Package Marking PG-TO263-3 031NE7N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ... |
| Document |
 IPB031NE7N3G Data Sheet
PDF 245.16KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPB031NE7N3 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IPB031NE7N3 |
Infineon |
Power Transistor |
|
| 3 | IPB031N08N5 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPB031N08N5 |
Infineon |
MOSFET |
|
| 5 | IPB033N10N5LF |
INCHANGE |
N-Channel MOSFET |
|