KM718V987 - Samsung semiconductor

KM718V987 (KM736V887 / KM718V987) 256Kx36 & 512Kx18 Synchronous SRAM

The KM736V887 and KM718V987 are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 256K(512K) words of 36(18) bits and integrates address and control registers, a 2-bit burst address counter and added some new functions for high performance cache RAM .

Features

• Synchronous Operation.
• On-Chip Address Counter.
• Self-Timed Write Cycle.
• On-Chip Address and Control Registers.
• 3.3V+0.165V/-0.165V Power Supply.
• I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O
• 5V Tolerant Inputs Except I/O Pins.
• Byte Writable Function.
• Global Write Enable Controls a full bus-width write.
• Power Down State via ZZ Signal.
• LBO Pin allows a choice of either a interleaved burst or a linear burst.
• Three Chip Enables for simple depth expansion with No Data Contention only for TQFP.
• Asynchronous Output Enable Control.
• AD.